savantic semiconductor product specification silicon pnp power transistors 2SB434 d escription with to-220 package complement to type 2sd234 applications for low frequency power amplifier and switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector- base voltage open emitter -60 v v ceo collector- emitter voltage open base -50 v v ebo emitter-base voltage open collector -6 v i c collector current -3 a 1.5 p c collector power dissipation t c =25 25 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-220) and symbol downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SB434 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-5ma ,i b =0 -50 v v (br)cbo collector-base breakdown voltage i c =-1ma ,i e =0 -60 v v (br)ebo emitter- base breakdown voltage i e =-1ma ,i c =0 -6 v v cesat collector-emitter saturation voltage i c =-3a; i b =-0.3a -1.2 v v besat base-emitter saturation voltage i c =-3a; i b =-0.3a -1.5 v i cbo collector cut-off current v cb =-40v; i e =0 -10 a i ebo emitter cut-off current v eb =-4v; i c =0 -10 a h fe dc current gain i c =-0.5a ; v ce =-1v 40 240 c ob output capacitance i e =0 ; v cb =-10v,f=1mhz 90 pf f t transition frequency i c =-0.5a ; v ce =-10v 3 mhz h fe classifications r o y 40-80 70-140 120-240 downloaded from: http:///
savantic semiconductor product specification 3 silicon pnp power transistors 2SB434 package outline fig.2 outline dimensions(unindicated tolerance:0.10 mm) downloaded from: http:///
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